High luminous flux semiconductor wafer-bonded AlGaInP/GaP large-area emitters

Autor:	D. A. Vanderwater, R.J. Weiss, J.S. Major, D.A. DeFevere, Frederick A. Kish, G.R. Trott
Rok vydání:	1994
Předmět:	Luminous flux Materials science business.industry law Optoelectronics Wafer Electrical and Electronic Engineering business Diode Lumen (unit) Light-emitting diode law.invention
Zdroj:	Electronics Letters. 30:1790-1792
ISSN:	1350-911X 0013-5194
DOI:	10.1049/el:19941232
Popis:	Data are presented demonstrating the high luminous flux operation of large-area light-emitting diodes (LEDs) fabricated by semiconductor wafer bonding. These LEDs operating in the 600–615 nm region are shown to be capable of emitting luminous fluxes (output powers) of 84 lumen (265 mW) and 195 lumen (475 mW) under DC and pulsed operation, respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e7b9b36417dbe2d892f76675b77e608b https://doi.org/10.1049/el:19941232 Zobrazit plný text záznamu