Processing advances in transparent Foturan® MEMS

Autor: D. Serkland, John D. Williams, Carrie Schmidt
Rok vydání: 2010
Předmět:
Zdroj: Applied Physics A. 99:777-782
ISSN: 1432-0630
0947-8396
DOI: 10.1007/s00339-010-5721-1
Popis: A lithographic patterning process for Foturan® is demonstrated that optimizes the aspect ratio and side-wall roughness and eliminates all traces of white redeposit on the side walls. The structures may then be run through a post-etch anneal to further reduce side-wall roughness to approximately 4 nm. Thermal fusion bonding during the post-etch anneal allows for the production of three-dimensional structures. Finally, we report the optical properties of patterned Foturan® microstructures observed using a 780-nm distributed feedback laser.
Databáze: OpenAIRE