Application of atomic force microscopy to detect edge of mask contaminations that may hinder titanium silicide formation
| Autor: | M. Pesaturo, Camillo Bresolin, P. Paruzzi, Davide Erbetta, V. Soncini, M. Bigi |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
chemistry.chemical_element Nanotechnology Edge (geometry) Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Titanium disilicide Atom Silicide Electrical and Electronic Engineering Composite material Carbon Deposition (law) Arsenic Titanium |
| Zdroj: | Microelectronic Engineering. 70:196-200 |
| ISSN: | 0167-9317 |
| Popis: | An atomic force microscope (AFM) was used to study anomalies in the titanium disilicide formation of narrow (0.26 µm) poly lines at the edge of n+ and p+ implant masks; a special test structure was designed both for morphological and electrical evaluations. On poly lines along the borders of the n+ mask, before titanium deposition, the AFM was able to detect some material build-up exactly on the locations where the silicide is severely reduced in thickness or interrupted, as inferred by electrical data and SEM analysis on finished samples. A carbon (or nitrogen) atom knock-on during the arsenic implant was invoked to explain the observed local hindering of the silicide formation. |
| Databáze: | OpenAIRE |
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