Beyond-Si materials and devices for more Moore and more than Moore applications

Autor:	Dennis Lin, X. Zhou, Jerome Mitard, Quentin Smets, S. Ramesh, Anne S. Verhulst, Ts. Ivanov, Niamh Waldron, S. Sioncke, Hiroaki Arimura, M. Schaekers, Nadine Collaert, Jacopo Franco, Rita Rooyackers, A. Sibaya-Hernandez, Anne Vandooren, Liesbeth Witters, A. Vais, A. Alian, G. Boccardi, Geert Eneman, Devin Verreck, Anabela Veloso, Hao Yu, A. Walke, Aaron Thean
Rok vydání:	2016
Předmět:	010302 applied physics Engineering business.industry Electrical engineering 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences PMOS logic Mobility devices 0103 physical sciences MOSFET Hardware_INTEGRATEDCIRCUITS New device 0210 nano-technology business NMOS logic Hardware_LOGICDESIGN
Zdroj:	ICICDT
DOI:	10.1109/icicdt.2016.7542050
Popis:	In this work, we will review the current progress in high mobility devices and new device architectures. With main focus on (Si)Ge for pMOS and In(Ga)As for nMOS, the benefits and challenges of integrating these materials on a Si platform will be discussed. Next to that, the advantages of tunnel FETs, vertical logic and in general heterogeneous integration will be highlighted.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e7804a62606acaa9ece2516ce72b3f82 https://doi.org/10.1109/icicdt.2016.7542050 Zobrazit plný text záznamu