Plasma Etching for Backside Wafer Thinning of SiC

Autor:	Kenneth M. Robb
Rok vydání:	2007
Předmět:	Materials science Plasma etching Mechanical Engineering Analytical chemistry Plasma Condensed Matter Physics Mechanics of Materials Etching (microfabrication) General Materials Science Wafer Profilometer Reactive-ion etching Composite material Inductively coupled plasma Plasma processing
Zdroj:	Materials Science Forum. :729-732
ISSN:	1662-9752
DOI:	10.4028/www.scientific.net/msf.556-557.729
Popis:	In this initial phase of work, two methods of backside wafer thinning using ICP plasma etching of two-inch SiC substrates have been considered. Plasma processes were optimized for nonbonded and bonded wafers. The non-bonded process was used to etch 250μm thick substrates to a final thickness of 100μm. The bonded process was used to etch glass bonded SiC substrates mechanically ground to 130μm thick and plasma etched to a final thickness of 100μm. Etch rate measurements and surface analysis were performed using a profilometer and white light interferometry. Etch rates of 3.4μm/min were achieved for the bonded process and 2.0μm/min for the non-bonded process. The surface morphology for the non-bonded process was three to four times lower than the bonded process. The part mechanically ground samples showed evidence of surface damage from the grinding process after plasma etching.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e76689d9ccfeffa06c6b2b42cd4c05e6 https://doi.org/10.4028/www.scientific.net/msf.556-557.729 Zobrazit plný text záznamu