Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

Autor:	Chetan C. Revadekar, Rajanish K. Kamat, Kishorkumar V. Khot, Deok-kee Kim, Pramod J. Patil, Computational Electronics, Suhas D. Yadav, Namita A. Ahir, Tukaram D. Dongale
Rok vydání:	2020
Předmět:	Radiation Materials science business.industry Conductive filament Optoelectronics General Materials Science Condensed Matter Physics business Resistive random-access memory
Zdroj:	Journal of Nano- and Electronic Physics. 12:02008-1
ISSN:	2306-4277 2077-6772
DOI:	10.21272/jnep.12(2).02008
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e765802762427f488fba0524adcfb2df https://doi.org/10.21272/jnep.12(2).02008 Zobrazit plný text záznamu