Significant enhancement of photoresponsivity in As-doped n-BaSi2epitaxial films by atomic hydrogen passivation
| Autor: | Kaoru Toko, Kazuhiro Gotoh, Takuma Sato, Zhihao Xu, Sho Aonuki, Takashi Suemasu, Noritaka Usami, Yudai Yamashita, Yoshikazu Terai |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Doping General Engineering Analytical chemistry General Physics and Astronomy 02 engineering and technology Carrier lifetime 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences law.invention Amorphous solid symbols.namesake law 0103 physical sciences Solar cell symbols 0210 nano-technology Raman spectroscopy Layer (electronics) Molecular beam epitaxy |
| Zdroj: | Applied Physics Express. 13:051001 |
| ISSN: | 1882-0786 1882-0778 |
| Popis: | We grew 500-nm-thick lightly As-doped n-BaSi2 epitaxial films at 600 °C by molecular beam epitaxy, and supplied atomic H in durations (t BaSi:H) of 0–30 min, followed by capping with a 3-nm-thick amorphous Si layer at 180 °C. The photoresponsivity of the BaSi2 films was enhanced by approximately five times by As doping. Deep-level transient spectroscopy measurement revealed the disappearance of two previously reported electron traps. The photoresponsivity was further enhanced by approximately six times after H supply. It reached a maximum at t BaSi:H = 1–10 min, owing to the reduction of defects. |
| Databáze: | OpenAIRE |
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