Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire

Autor:	Wen Wu Liu, Zhiming Wang, Yu Chuan Shih, Kai De Liang, Arumugam Manikandan, Ling Lee, Mu Tung Chang, Yu-Lun Chueh, Yu Ze Chen
Rok vydání:	2021
Předmět:	In situ Materials science business.industry Process (computing) Nanowire Memristor Electronic Optical and Magnetic Materials law.invention Resistive random-access memory Metal law visual_art visual_art.visual_art_medium Optoelectronics Current (fluid) Resistive switching memory business
Zdroj:	Advanced Electronic Materials. 7:2000252
ISSN:	2199-160X
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e75d936e132c7d59ed0db6bd23263ed8 https://doi.org/10.1002/aelm.202000252 Zobrazit plný text záznamu Plný text