A compact model for gate tunneling currents in undoped cylindrical surrounding-gate metal-oxide-semiconductor field-effect transistors
| Autor: | Christoforus Bimo, Toto Winata, Khairurrijal Khairurrijal, Ibnu Syuhada, Fatimah A. Noor |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Transistor Context (language use) 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic circuit simulation Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Computer Science::Hardware Architecture Quadratic equation law 0103 physical sciences Field-effect transistor Electrical and Electronic Engineering Perturbation theory 0210 nano-technology Quantum Quantum tunnelling |
| Zdroj: | Microelectronic Engineering. 216:111086 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2019.111086 |
| Popis: | We present a compact model of the gate tunneling current in cylindrical surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs) based on quantum mechanical correction. The model is physics-based and is given in an analytical closed form. We start by deriving a quadratic approximation of the quantum electrostatic potential with the two lowest energy levels using quantum perturbation theory. In addition, small-diameter cylindrical SG MOSFETs can be described excellently by taking both structural and electrical confinement effects into account. A self-consistent Schrodinger-Poisson simulation was used as a benchmark to assess the proposed model. It was found that the calculated gate tunneling currents determined using the model matched well with the corresponding currents derived using self-consistent calculations. The model is thus useful for fast analysis of gate tunneling currents within the context of a circuit simulator. |
| Databáze: | OpenAIRE |
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