Preparation and characterization of materials in the system xCuO-(50-x) CdO-50B 2 O 3
| Autor: | Morsi M. Morsi, S. Ibrahim, Reham M.M. Morsi |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Process Chemistry and Technology Analytical chemistry Mineralogy 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Spectral line Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid Characterization (materials science) Ion Molar volume Octahedron 0103 physical sciences Materials Chemistry Ceramics and Composites Fourier transform infrared spectroscopy 0210 nano-technology |
| Zdroj: | Ceramics International. 43:8306-8313 |
| ISSN: | 0272-8842 |
| DOI: | 10.1016/j.ceramint.2017.03.166 |
| Popis: | New glassy materials in the system xCuO-(50-x) CdO–50B 2 O 3 were prepared by a melting-quench technique. Their UV–vis, FTIR, electrical, dielectric, SEM, XRD patterns and density properties were investigated. SEM and XRD studies confirmed their amorphous nature and the presence of crystalline phases in the sample with 50 mol% CuO. Replacing CdO with increasing concentrations of CuO decreased the density and increased the molar volume. Optical reflectance spectra revealed the presence of Cu 2+ ions in octahedral coordination, as well as the presence of Cu 1+ and Cuo in the samples with greater than 30% CuO. FTIR measurements confirmed the conversion of BO 4 units to BO 3 units with increasing CuO contents. The conduction in the CuO-containing samples increased as the CdO was completely replaced by CuO. The CuO-containing samples exhibited a slight increase in the ɛʹ values with increasing temperature and a decrease with increasing frequency. The ɛʹ values gradually increase upon replacing CdO with up to 40 mol% CuO. An abrupt increase in ɛʹ was recorded for the sample with 50 mol% CuO, particularly at high temperature. The latter sample showed an eʹ value of 927at 100 Hz and 298 K. Prepared samples with high ɛʹ values are promising candidates for capacitor materials in electronic devices. |
| Databáze: | OpenAIRE |
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