Effect of combined radiation processing on parameters of Si-based MOS transistors

Autor:	B. P. Koman, R. I. Bihun, O.A. Balitskii
Rok vydání:	2017
Předmět:	Nuclear and High Energy Physics Radiation processing Photon Materials science Physics::Instrumentation and Detectors Infrared Astrophysics::High Energy Astrophysical Phenomena ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 01 natural sciences law.invention Computer Science::Hardware Architecture Computer Science::Emerging Technologies law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering General Materials Science Irradiation ComputingMethodologies_COMPUTERGRAPHICS Radiation 010308 nuclear & particles physics business.industry Transistor Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Threshold voltage Optoelectronics 020201 artificial intelligence & image processing business Hardware_LOGICDESIGN
Zdroj:	Radiation Effects and Defects in Solids. 172:600-609
ISSN:	1029-4953 1042-0150
DOI:	10.1080/10420150.2017.1371169
Popis:	The variation of parameters of Si-based MOS-transistors affected by combined infrared and X- ray photons processing were presented. It was found that X-ray irradiated transistor under incoherent in...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e743a8f67f1df61da1f12694cfafb863 https://doi.org/10.1080/10420150.2017.1371169 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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