Synthesis and characterization of GaN using gas–solid reactions
| Autor: | F. J. Moura, B. C. Di Lello, I. G. Solórzano |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Diffraction
Materials science Mechanical Engineering Mineralogy Gallium nitride Gas solid Condensed Matter Physics Characterization (materials science) chemistry.chemical_compound Chemical engineering chemistry Mechanics of Materials Transmission electron microscopy Phase (matter) Carbon source Solid phases General Materials Science |
| Zdroj: | Materials Science and Engineering: B. 93:219-223 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/s0921-5107(02)00016-8 |
| Popis: | Gallium nitride powders were synthesized in a new vertical reactor to maximize contact between gas and solid phases. In the experiments, GaN powders were obtained by two different routes: (1) gas–solid reaction from Ga2O3/NH3 system; (2) gas–solid reaction from Ga2O3/3C/NH3 reaction system. The last system presents a new route to GaN from gas–solid reaction. The powders produced were collected and characterized using X-ray diffraction (XRD). Transmission electron microscopy (TEM) was used to characterize GaN produced from Ga2O3/NH3 system. XRD taken from the powders have shown different results. For the powder produced from Ga2O3/NH3 system, XRD pattern shows presence of GaN and unreacted Ga2O3. On the other hand, powder produced from Ga2O3/3C/NH3 system, XRD pattern shows presence of primarily GaN phase. Results show high conversion to GaN, when the solid phase reactant had been a Ga2O3 and carbon source mixtures. |
| Databáze: | OpenAIRE |
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