Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current
| Autor: | Eui Joong Shin, Sung Won Shin, Seung Hwan Lee, Byung Jin Cho, Wan Sik Hwang, Hyun Jun Ahn, Hyun Yong Yu, Tae In Lee, Min Ju Kim |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Current (mathematics) Materials science Condensed matter physics Doping Transistor Gate leakage current chemistry.chemical_element Germanium Dielectric 01 natural sciences Electronic Optical and Magnetic Materials law.invention chemistry law 0103 physical sciences MOSFET Electrical and Electronic Engineering High-κ dielectric |
| Zdroj: | IEEE Electron Device Letters. 40:502-505 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | An advanced gate stack of Y-doped ZrO2 high-k dielectric is demonstrated for Ge MOSFETs. ZrO2 is implemented due to its high-permittivity (high-k) value, and additional Y is doped into the ZrO2 to enhance interfacial properties. The gate stack of ZrO2 with 2~4% Y doping shows improved electrical properties, achieving an EOT of 0.67 nm, a low interface trap density ( $\text{D}_{\textsf {it}}$ ) of $\textsf {1.2}\,\,\times \,\,\textsf {10}^{\textsf {12}}$ eV−1cm−2, a record-low gate leakage current of $\textsf {1.14}\,\,\times \,\,\textsf {10}^{-\textsf {7}}$ A/cm2 at −1V, and peak mobility of $\textsf {68 cm}^{\textsf {2}}/\textsf {V}\cdot \textsf {s}$ . The proposed gate stack would enhance transistor speed and save power consumption of Ge MOSFETs. |
| Databáze: | OpenAIRE |
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