Formation of a Graphene-Like SiN Layer on the Surface Si(111)
| Autor: | Timur V. Malin, A. S. Kozhukhov, Ildikó Cora, E. V. Fedosenko, K. S. Zhuravlev, Béla Pécz, Yu. G. Galitsyn, Vladimir G. Mansurov, S. A. Teys |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Silicon Band gap Graphene Analytical chemistry chemistry.chemical_element 02 engineering and technology Nitride 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Amorphous solid law.invention Crystal chemistry law Phase (matter) 0103 physical sciences Scanning tunneling microscope 0210 nano-technology |
| Zdroj: | Semiconductors. 52:1511-1517 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782618120151 |
| Popis: | 00-The kinetics of the formation and thermal decomposition of a two-dimensional SiN-(8 × 8) nitride layer on a Si(111) surface is studied. The SiN-(8 × 8) structure is a metastable intermediate phase formed during the nitridation of silicon before the formation of a stable amorphous Si3N4 phase. Studying the SiN-(8 × 8) structure by scanning tunneling microscopy shows its complex structure: it consists of an adsorption (8/3 × 8/3) phase, with the lateral period 10.2 A, and a honeycomb structure with a ~6 A side of a hexagon that is turned 30° with respect the adsorption phase. The band gap of the SiN-(8 × 8) phase is measured and found to be ~2.8 eV, which is smaller compared to the band gap of the β-Si3N4 crystal phase 5.3 eV. The interplanar spacings in the (AlN3)/(SiN)2 structure on the Si(111) surface are measured. The spacings are 3.3 and 2.86 A in SiN and AlN, respectively. Such interplanar spacings are indicative of weak van der Waals interaction between the layers. A model of the SiN-(8 × 8) structure as a flat graphene-like layer is suggested. The model is consistent with the diffraction and microscopy data. |
| Databáze: | OpenAIRE |
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