1.47–1.49-μm InGaAsP/InP diode laser arrays

Autor: D. Westerfeld, Z. Shellenbarger, A. Gourevitch, C. W. Trussell, D. Donetsky, Ramon U. Martinelli, Gregory Belenky, Boris Laikhtman, H. An
Rok vydání: 2003
Předmět:
Zdroj: Applied Physics Letters. 83:617-619
ISSN: 1077-3118
0003-6951
DOI: 10.1063/1.1596379
Popis: Continuous-wave power of 25 W at 1.47-μm was obtained from a 20-element, 1-cm-wide, one-dimensional diode laser array mounted in a microchannel water-cooled heat sink. The coolant temperature was 16 °C. A two-dimensional array comprising four laser bars achieved a quasi-cw output of 110 W at a wavelength of 1.49 μm, with an 8–9-nm full width at half-maximum spectrum width. The coolant temperature was 18 °C. We developed a theoretical model that describes array heating. Thermal resistances of 0.56, 0.4, and 0.34 K/W were experimentally and theoretically determined for arrays with fill factors of 10%, 20%, and 40%, respectively.
Databáze: OpenAIRE