Temperature dependence of the properties of DBR mirrors used in surface normal optoelectronic devices
| Autor: | D. L. Crawford, J.J. Dudley, John E. Bowers |
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| Rok vydání: | 1992 |
| Předmět: |
Range (particle radiation)
Materials science Silicon business.industry chemistry.chemical_element Lambda Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Gallium arsenide Wavelength chemistry.chemical_compound Optics chemistry Distributed Bragg reflector laser law Optoelectronics Electrical and Electronic Engineering business Penetration depth |
| Zdroj: | IEEE Photonics Technology Letters. 4:311-314 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/68.127197 |
| Popis: | The variation in the center wavelength of distributed Bragg reflectors used in optoelectronic devices, such as surface emitting lasers and Fabry-Perot modulators, is measured as the temperature of the mirrors changes over the range 25 degrees C to 105 degrees C. An analytic expression for the shift in center wavelength with temperature is presented. The mirrors measured are made of InP/InGaAsP ( lambda /sub gap/=1.15 mu m), GaAs/AlAs, and Si/SiN/sub x/. The linear shifts in center wavelength are 0.110+or-0.003 nm/ degrees C, 0.087+or-0.003 nm/ degrees C, and 0.067+or-0.007 nm/ degrees C for the InP/InGaAsP, GaAs/AlAs, and Si/SiN mirrors, respectively. Based on these data, the change in penetration depth with temperature is calculated. > |
| Databáze: | OpenAIRE |
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