Density Functional Theory on NV Center in 4H SiC
| Autor: | Adam Gali, András Csóré |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Condensed matter physics Spin polarization Mechanical Engineering Diamond 02 engineering and technology Electronic structure engineering.material 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Paramagnetism Mechanics of Materials Qubit 0103 physical sciences engineering General Materials Science Density functional theory 010306 general physics 0210 nano-technology Ground state Quantum computer |
| Zdroj: | Materials Science Forum. 897:269-274 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.897.269 |
| Popis: | Paramagnetic defects in solids have become attractive systems for quantum computing as well as magnetometry in recent years. One of the leading contenders is the negatively charged nitrogen-vacancy defect (NV center) in diamond proposed to be highly promising with respect the afore-mentioned applications. In our study we investigate the NCVSi defect in 3C, 4H and 6H SiC as alternative choices with superior properties. Electronic structure of NV center in SiC exhibits S = 1 triplet ground state with the possibility of optical spin polarization. On the other hand, our results obtained by density functional theory calculations may contribute to unambiguously identify the possible defect configurations. |
| Databáze: | OpenAIRE |
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