| Autor: |
G. Constantinidis, M. Lagadas, Vo Van Tuyen, B. Szentpáli |
| Rok vydání: |
2001 |
| Předmět: |
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| Zdroj: |
Materials Science and Engineering: B. 80:257-261 |
| ISSN: |
0921-5107 |
| Popis: |
The planar doped barrier diodes are majority carrier devices with technologically controlled barrier height. This paper reviews the main current conducting mechanisms. The limits of the I–V characteristics are described. The design of the device is shown on an example. The measured and calculated characteristics agree well. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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