Growth of strained GaAs1−ySby and GaAs1−y−zSbyNz quantum wells on InP substrates
| Autor: | Susan E. Babcock, J.Y.T. Huang, Thomas F. Kuech, D.P. Xu, Luke J. Mawst, Xueyan Song |
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| Rok vydání: | 2008 |
| Předmět: |
Photoluminescence
Analytical chemistry Mineralogy Condensed Matter Physics Epitaxy Unsymmetrical dimethylhydrazine Inorganic Chemistry Metal Secondary ion mass spectrometry chemistry.chemical_compound chemistry visual_art Materials Chemistry visual_art.visual_art_medium Indium phosphide Metalorganic vapour phase epitaxy Quantum well |
| Zdroj: | Journal of Crystal Growth. 310:2382-2389 |
| ISSN: | 0022-0248 |
| Popis: | The metal organic vapor-phase epitaxy (MOVPE) growth conditions and properties of fully strained GaAs 1− y − z Sb y N z /InP multi-quantum wells (MQWs) are investigated. Higher Sb incorporation within the strained GaAs 1− y Sb y layers was observed when using a higher Sb/(As+Sb) precursor ratio and higher growth temperature. However, lattice-latching effects and the strain values ultimately limit the maximum amount of Sb incorporated. In GaAs 1− y − z Sb y N z layers, a decrease of AsH 3 precursor flux leads to an increase of N and Sb incorporation, whereas an increase of unsymmetrical dimethylhydrazine (U-DMHy) precursor flux leads to an increase of N and a decrease of Sb incorporation. The photoluminescence emission from the GaAs 1− y − z Sb y N z QW is observed to red-shift with decreasing AsH 3 and increasing U-DMHy flux. Sb accumulation at the InP to GaAs 1− y − z Sb y N z interface is also observed from secondary ion mass spectroscopy analysis, indicating further optimization of switching sequences is required to improve the compositional uniformity of the QW. |
| Databáze: | OpenAIRE |
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