Maskless selective growth and in situ beryllium-doping of GaAs grown by low-energy focused ion beam

Autor:	Kangsa Pak, S. Itoh, E.M. Kim, T. Gotoh, T. Nishiyama, K. Numata
Rok vydání:	2005
Předmět:	In situ Fabrication Materials science Doping Analytical chemistry chemistry.chemical_element Substrate (electronics) Condensed Matter Physics Focused ion beam Inorganic Chemistry chemistry Materials Chemistry Irradiation Beryllium Molecular beam
Zdroj:	Journal of Crystal Growth. 275:e989-e993
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2004.11.153
Popis:	Maskless selective growth of Be-doped GaAs films was performed by using a low-energy (30–200 eV) Be–Ga focused ion beam (FIB) with the irradiation of As4 molecular beam simultaneously. As a result, the selective p-type films of GaAs were grown successfully. Moreover, it was found that irradiation damages could be minimized and the surface morphology was improved by using the low-energy FIB. A p–n junction was formed on n+-type GaAs substrate by maskless selective growth for the first time. The I–V characteristics of the sample confirmed successful p–n structure formation. These results indicate this method would be suitable for making maskless selective micro-device fabrication.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e6f284c6382fbb6ed474cdcd141b4a77 https://doi.org/10.1016/j.jcrysgro.2004.11.153 Zobrazit plný text záznamu Full Text from ScienceDirect