Vertical GaN MISFET for chip‐on‐chip high speed laser driving applications
| Autor: | E. Bahat Treidel, Andreas Klehr, Oliver Hilt, Arnim Ginolas, Heike Christopher, Armin Liero, Joachim Würfl |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Laser diode business.industry 020208 electrical & electronic engineering Transistor Wide-bandgap semiconductor Gallium nitride 02 engineering and technology Distributed Bragg reflector law.invention Gallium arsenide Semiconductor laser theory chemistry.chemical_compound chemistry law 0202 electrical engineering electronic engineering information engineering Optoelectronics Electrical and Electronic Engineering business MISFET |
| Zdroj: | Electronics Letters. 56:1084-1086 |
| ISSN: | 1350-911X 0013-5194 |
| DOI: | 10.1049/el.2020.0896 |
| Popis: | In this work, the authors developed vertical gallium nitride metal-insulator-semiconductor field-effect transistors (GaN MISFETs) for direct chip-on-chip assembly with gallium arsenide-based broad area distributed Bragg reflector diode laser. The intention of this work had been to provide a high-speed driver solution having extremely small parasitic inductive loops. It is shown that devices manufactured on ammonothermal substrates have large conduction current density above 1.7 kA/cm2, specific on-state resistance as low as 2.1 mΩ·cm2 and on-state sheet resistance of 18.6 Ω·mm. It is further shown that scaling these devices to large gate periphery chips is possible. Finally, a low inductance vertical GaN MISFET on laser diode integration assembly is realised on an AlN ceramic board using a transistor chip with 142 mm gate width and 305 mΩ on-state resistance. The arrangement enables 3.6 ns laser pulses at an emission wavelength at 904 nm and a peak optical power of 4 W. |
| Databáze: | OpenAIRE |
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