| Popis: |
A monolithic, L-band, single-pole, double-throw, nonreflective (SPDTNR) GaAs FET switch has been developed. The switch has been shown to be significantly less sensitive to DC ripple than conventional FET switches, and it operates with either positive or negative control voltages. Small-signal insertion loss is less than 1.3 dB over a 1- to 2-GHz bandwidth with less than 1.3:1 VSWR (voltage standing-wave ratio) in all states. Isolation exceeds 35 dB, with a switching current requirement of less than 10 mu A. The chip size is 0.97 mm*1.75 mm*0.15 mm, which permits more than 2100 monolithic switches to be fabricated on a 3-in GaAs wafer. The switch is compatible with TTL (transistor transistor logic) or CMOS logic levels. > |
