Quantum dot light-emitting diodes using a graphene oxide/PEDOT:PSS bilayer as hole injection layer
| Autor: | Tian-Zi Shen, Won-Hyeok Park, Jun-Seo Lee, Dae-Ho Song, Jang-Kun Song, Suk-Ho Song, Sang-soo Kim |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
business.industry Graphene General Chemical Engineering Bilayer Nanotechnology 02 engineering and technology General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention Anode PEDOT:PSS law Quantum dot Optoelectronics Work function Quantum efficiency 0210 nano-technology business Light-emitting diode |
| Zdroj: | RSC Advances. 7:43396-43402 |
| ISSN: | 2046-2069 |
| DOI: | 10.1039/c7ra07948f |
| Popis: | Quantum dot (QD) light-emitting diode (QLED) displays are highly promising optoelectronic devices, but several critical issues remain to be solved. The hole–electron charge balance is particularly important but hole-injection is more difficult than electron-injection in QLEDs; as a result, good hole injection ability is required. Here, we introduce a graphene oxide (GO) layer between the anode electrode and a typical hole injection layer of poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) to improve the hole injection ability of a QLED device. The device with the GO/PEDOT:PSS bilayer hole injection layer exhibits a three-fold increase in brightness and external quantum efficiency as well as doubled current efficiency compared to a counterpart device using a single PEDOT:PSS layer. In addition, the turn-on voltage is improved from 8.35 V to 5.35 V. The dramatic improvements in the optoelectronic performance are attributed to the stepwise energy band structure in the hole injection bilayers; the work function of the GO layer is measured to be 4.98 eV, which reduces the interfacial barrier energy between the anode and PEDOT:PSS layer. |
| Databáze: | OpenAIRE |
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