300-V class power n-channel LDMOS transistor implemented in 0.18-μm silicon-on-insulator (SOI) technology

Autor:	Lei Shi, Jian Wu, Shuai Zhang, Hsiao-Chin Tuan, Xiao-Jing Wu
Rok vydání:	2016
Předmět:	LDMOS Engineering Silicon Silicon on insulator chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 01 natural sciences law.invention law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Wafer Electrical and Electronic Engineering Safety Risk Reliability and Quality 010302 applied physics business.industry 020208 electrical & electronic engineering Transistor Electrical engineering Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Power (physics) CMOS chemistry N channel Optoelectronics business Hardware_LOGICDESIGN
Zdroj:	Microelectronics Reliability. 61:125-128
ISSN:	0026-2714
DOI:	10.1016/j.microrel.2015.11.004
Popis:	A SOI platform is developed for a LDMOS transistor from 70 V to 300 V. It is one of the best cases covering the wide voltage range. By applying novel DTI technology, the pitch of a single LDMOS transistor cell is reduced. Thin silicon and oxide film help to reduce the process complexity and the cost of SOI wafer. The platform is compatible with standard CMOS technology, and is appreciable for broad power IC products.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e6c54a2bcf79986989f5e2963dde1d3d https://doi.org/10.1016/j.microrel.2015.11.004 Zobrazit plný text záznamu Full Text from ScienceDirect