Evaluation of AlGaN/GaN metal–oxide–semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications
| Autor: | Jui Chien Huang, Chang Fu Dee, Edward Yi Chang, Quang Ho Luc, Burhanuddin Yeop Majlis, Yueh Chin Lin, Yu Sheng Chiu |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Power gain Materials science Physics and Astronomy (miscellaneous) Passivation business.industry Gate dielectric RF power amplifier General Engineering General Physics and Astronomy 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Atomic layer deposition Semiconductor 0103 physical sciences Optoelectronics Wafer 0210 nano-technology business |
| Zdroj: | Japanese Journal of Applied Physics. 56:094101 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.7567/jjap.56.094101 |
| Popis: | A plasma enhanced atomic layer deposition (PEALD) HfO2/AlN dielectric stack was used as the gate dielectric for AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) for high-frequency power device applications. The capacitance–voltage (C–V) curves of the HfO2/AlN/GaN MOS capacitor (MOSCAP) showed a small frequency dispersion along with a very small hysteresis (~50 mV). Moreover, the interface trap density (D it) was calculated to be 2.7 × 1011 cm−2 V−1 s−1 at 150 °C. Using PEALD-AlN as the interfacial passivation layer (IPL), the drain current of the HfO2/AlN MOS-HEMTs increased by about 46% and the gate leakage current decreased by six orders of magnitude as compared with those of the conventional Schottky gate AlGaN/GaN HEMTs processed using the same epitaxial wafer. The 0.3-µm-gate-length HfO2/AlN/AlGaN/GaN MOS-HEMTs demonstrated a 2.88 W/mm output power, a 23 dB power gain, a 30.2% power-added efficiency at 2.4 GHz, and an improved device linearity as compared with the conventional AlGaN/GaN HEMTs. The third-order intercept point at the output (OIP3) of the MOS-HEMTs was 28.4 as compared with that of 26.5 for the conventional GaN HEMTs. Overall, the MOS-HEMTs with a HfO2/AlN gate stack showed good potential for high-linearity RF power device applications. |
| Databáze: | OpenAIRE |
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