11.8 GHz GAINP/GAAS HBT dynamic frequency divider using HLO-FF technique
| Autor: | Guo-Wei Huang, Hung Ju Wei, Yu Wen Chang, Chinchun Meng |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Materials science
Voltage swing business.industry Heterojunction bipolar transistor Transistor Electrical engineering Biasing Emitter-coupled logic Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Frequency divider law Optoelectronics Electrical and Electronic Engineering business Microwave Voltage |
| Zdroj: | Microwave and Optical Technology Letters. 50:2642-2645 |
| ISSN: | 1098-2760 0895-2477 |
| DOI: | 10.1002/mop.23740 |
| Popis: | An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) dynamic frequency divider based on HLO-FF (high-speed latching operating flip-flop) structure is demonstrated at 4.1–11.8 GHz. In this experiment, a conventional static frequency divider using the same cut-off-frequency device is also fabricated for comparison. By biasing the HBT transistors around the peak of fT and optimizing the Iread/Ilatch ratio, the maximum operating frequency of the HLO-FF is greatly improved due to higher slew-rate and smaller voltage swing. The speed of HLO-FF is faster about 48% than that of static structure. The core current is 13 mA at the supply voltage of 5 V. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2642–2645, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23740 |
| Databáze: | OpenAIRE |
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