(Invited)Ultra-Low Power III-V-Based MOSFETs and Tunneling FETs

Autor:	Takahiro Gotow, Chih-Yu Chang, Dae-Hwan Ahn, Mitsuru Takenaka, Kimihiko Kato, Shinichi Takagi, Chiaki Yokoyama, Kiyoshi Endo
Rok vydání:	2018
Předmět:	Ultra low power Hysteresis Semiconductor Materials science business.industry MOSFET Optoelectronics Steep slope business Quantum tunnelling Quantum well
Zdroj:	ECS Transactions. 85:27-37
ISSN:	1938-5862 1938-6737
Popis:	The technical challenges and viable technologies of tunneling MOSFETs (TFET) using III-V semiconductors are present in this paper. Device engineering indispensable in improving the performance of TFETs is summarized. In particular, the electrical characteristics of TFETs using In0.53Ga0.47As/higher-In-content InGaAs/In0.53Ga0.47As quantum well (QW) structures are addressed as viable examples. Also, the effect of surface pre-treatment on InAs on the MOS interface properties, important for the InAs MOSFET and TFET performance, is presented. In addition, the electrical properties of In0.53Ga0.47As MOSFETs using ALD La2O3 gate insulators with ferroelectric-like hysteresis are also introduced as another possible direction for steep slope devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e6ab0846db9e0a1b5b3c99027ff37f93 https://doi.org/10.1149/08508.0027ecst Zobrazit plný text záznamu