Electronic properties of ion-implanted polymer films
| Autor: | James Kaufmann, Mary G. Moss, R. E. Giedd, Y.Q. Wang |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Nuclear and High Energy Physics
Phase transition Materials science business.industry Physics::Medical Physics Analytical chemistry Insulator (electricity) Conductivity Thermal conduction Ion Condensed Matter::Materials Science Semiconductor Electrical resistivity and conductivity Hall effect business Instrumentation |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :710-715 |
| ISSN: | 0168-583X |
| DOI: | 10.1016/s0168-583x(96)01162-7 |
| Popis: | Electronic properties of polystyrene-acrylonitrile (PSA) films, implanted with 20–175-keV nitrogen to a dose range of 5 × 1013–5 × 1016 ions/cm2, were studied. Electrical conductivity of the films increases more than 17 orders of magnitude with increasing ion dose and beam energy. Temperature dependence of the conductivity suggests a composite hopping conduction in the films. Temperature dependence of piezoresistance shows that the variable-range hopping conduction is also responsible for piezoresistivity in the films. Hall coefficient measurements show no hall voltage with the experimental limit of ∼ 1 μV, indicating that a large number of carriers (> 1022 cm−3) are present in the implanted films. Optical absorption indicates a progressive optical gap closing as ion dose increases, suggesting a gradual phase transition from insulator to semiconductor. Graphitic properties were observed in the PSA film implanted with 175-keV N2+ ions to a dose of 5 × 1016 ions/cm2. |
| Databáze: | OpenAIRE |
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