Angle of incidence variation of sputtering of germanium
| Autor: | D. Basu, Tapas Kumar Chini, Satyaranjan Bhattacharyya, J. P. Biersack |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Nuclear and High Energy Physics
Radiation Yield (engineering) Materials science Physics::Instrumentation and Detectors Semiconductor materials chemistry.chemical_element Angle of incidence Germanium Condensed Matter Physics Ion Condensed Matter::Materials Science Angular variation chemistry Sputtering General Materials Science Angular dependence Atomic physics |
| Zdroj: | Radiation Effects and Defects in Solids. 127:349-355 |
| ISSN: | 1029-4953 1042-0150 |
| DOI: | 10.1080/10420159408221043 |
| Popis: | The angular dependence of the physical sputtering yield of germanium bombarded by Ar ions has been studied at 23 keV and 30 keV. The sputtering yield increases with increasing incident angle and reaches a maximum around 70° to 75°. Results are compared with other experimental data and are discussed in the light of predictions of the existing theoretical and semiempirical models. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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