Electromagnetic Modeling of Through-Silicon Via (TSV) Interconnections Using Cylindrical Modal Basis Functions

Autor:	Tapobrata Bandyopadhyay, Ki Jin Han, Madhavan Swaminathan
Rok vydání:	2010
Předmět:	Discretization Through-silicon via Modal analysis Basis function Hardware_PERFORMANCEANDRELIABILITY Integrated circuit Integral equation law.invention Modal law Hardware_INTEGRATEDCIRCUITS Electronic engineering Computational electromagnetics Electrical and Electronic Engineering Mathematics
Zdroj:	IEEE Transactions on Advanced Packaging. 33:804-817
ISSN:	1557-9980 1521-3323
DOI:	10.1109/tadvp.2010.2050769
Popis:	This paper proposes an efficient method to model through-silicon via (TSV) interconnections, an essential building block for the realization of silicon-based 3-D systems. The proposed method results in equivalent network parameters that include the combined effect of conductor, insulator, and silicon substrate. Although the modeling method is based on solving Maxwell's equation in integral form, the method uses a small number of global modal basis functions and can be much faster than discretization-based integral-equation methods. Through comparison with 3-D full-wave simulations, this paper validates the accuracy and the efficiency of the proposed modeling method.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e67efec72fb249bd552bf859ba545d8e https://doi.org/10.1109/tadvp.2010.2050769 Zobrazit plný text záznamu