Gradual Edge Contact between Mo and MoS2 Formed by Graphene-Masked Sulfurization for High-Performance Field-Effect Transistors

Autor:	Seoungwoong Park, Sung-Pyo Cho, Byung Hee Hong, Hwa Rang Kim, Jonghwan Lee, Dong Heon Shin, Jaekwang Song
Rok vydání:	2021
Předmět:	Materials science business.industry Graphene Contact resistance law.invention chemistry.chemical_compound Semiconductor chemistry law Physical vapor deposition Electrode Optoelectronics General Materials Science Field-effect transistor Direct and indirect band gaps business Molybdenum disulfide
Zdroj:	ACS Applied Materials & Interfaces. 13:54536-54542
ISSN:	1944-8252 1944-8244
DOI:	10.1021/acsami.1c15648
Popis:	Two-dimensional materials have attracted great attention for their outstanding electronic properties. In particular, molybdenum disulfide (MoS2) shows great potential as a next-generation semiconductor due to its tunable direct bandgap with a high on-off ratio and extraordinary stability. However, the performance of MoS2 synthesized by physical vapor deposition has been limited by contact resistance between an electrode and MoS2, which determines overall device characteristics. Here, in order to reduce the contact resistance, we use in situ sulfurization of Mo by H2S gas treatment masked by a patterned graphene gas barrier, so that the Mo channel area can be selectively formed, resulting in a gradual edge contact between Mo and MoS2. Compared with field-effect transistors with a top contact between the Au/Ti electrode and the MoS2 channel, a gradual edge contact between the Mo electrode and the MoS2 channel provides a considerably enhanced electrical performance.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e67e55dba853453d9b15364c4e446e30 https://doi.org/10.1021/acsami.1c15648 Zobrazit plný text záznamu