Bipolar transistor action from an amorphous carbon/silicon heterojunction emitter
| Autor: | K.K. Chan, P. Ashburn, Gehan A. J. Amaratunga, Z.A. Shafi, S. P. Wong |
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| Rok vydání: | 1993 |
| Předmět: |
Materials science
Heterostructure-emitter bipolar transistor business.industry Mechanical Engineering Heterojunction bipolar transistor Bipolar junction transistor Transistor General Chemistry equipment and supplies Electronic Optical and Magnetic Materials law.invention Current injection technique Amorphous carbon law Materials Chemistry Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Common emitter |
| Zdroj: | Diamond and Related Materials. 2:1445-1448 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/0925-9635(93)90156-v |
| Popis: | Bipolar action from an amorphous carbon (a-C)/Si heterojunction is reported. A bipolar transistor structure with a p-type Si base and an undoped wide-band-gap a-C emitter is used to monitor the current at the collector as a function of base current. Although no current gain or practical transistor action is obtained from such a device, there is evidence of carrier injection from the a-C into the Si. It is also seen that this injection current is a function of the current into the p-type Si base. |
| Databáze: | OpenAIRE |
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