High power laser-amplifier photonic integrated circuit for 1.48 micron wavelength operation

Autor: Uziel Koren, Clinton Randy Giles, M.G. Young, G. Raybon, M. D. Chien, Charles A. Burrus, B. Tell, J. D. Evankow, Robert M. Jopson, Barry Miller, K.F. Brown-Goebeler
Rok vydání: 1991
Předmět:
Zdroj: Optical Fiber Communication.
Popis: Laser-amplifier photonic integrated circuits (PIC’s) with high coupling efficiency between the laser and amplifier elements, using the InP material system, have been described previously [l-3]. Surface emitting laser amplifier devices have also been reported in the GaAs system using second order Bragg reflector gratings [4]. In the present work we describe a strained layer MQW laser-amplifier PIC intended for use as a high power source for pumping erbium doped fiber amplifiers (EDFA’s) at 1.48 micron wavelength. Multiple quantum well (MQW) optical amplifiers have extremely high saturation output powers [5,6], making them very suitable for high power applications.
Databáze: OpenAIRE