Variation in natural threshold voltage of NVM circuits due to dopant fluctuations and its impact on reliability

Autor:	David Burnett, A. Hoefler, P.J. Kuhn, Jack Higman, C.-N.B. Li
Rok vydání:	2003
Předmět:	Materials science Dopant business.industry Electrical engineering Optoelectronics Data retention business Quantum tunnelling Threshold voltage Electronic circuit Leakage (electronics)
Zdroj:	Digest. International Electron Devices Meeting.
Popis:	The statistical distribution of the natural threshold voltage (V/sub T0/) of 512k-bit NVM circuit arrays has been studied for two different technologies. The major source of the V/sub T0/ variation is dopant fluctuations of the NVM well. An analytical model for the dopant fluctuations provides excellent agreement with the measured circuit V/sub T0/ variation and NVM cell mismatch for both technologies. The reliability implications of the V/sub T0/ variation are considered using charge leakage models for data retention.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e656f8543a743a80859bf61f797851e7 https://doi.org/10.1109/iedm.2002.1175896 Zobrazit plný text záznamu