Study of structural defects limiting the luminescence of InGaN single quantum wells
| Autor: | Javier Piqueras, Martin Stutzmann, Martin Albrecht, Horst P. Strunk, Ana Cremades |
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| Rok vydání: | 2001 |
| Předmět: |
Materials science
business.industry Scanning electron microscope Mechanical Engineering Cathodoluminescence Condensed Matter Physics Optics Mechanics of Materials Transmission electron microscopy Optoelectronics General Materials Science Emission spectrum Thin film business Luminescence Quantum well Non-radiative recombination |
| Zdroj: | Materials Science and Engineering: B. 80:313-317 |
| ISSN: | 0921-5107 |
| Popis: | InGaN quantum well (QW) structures with different thicknesses have been characterised by means of cathodoluminescence (CL) in the scanning electron microscope and transmission electron microscopy (TEM), in order to study the structural defects that limit the device operation. Misfit dislocations appear as non-radiative centres in the CL images and compete with the quantum-well related luminescence. The luminescence red shift with increasing QW thickness has been found to be influenced by composition fluctuations. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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