Terahertz Even-Order Subharmonic Mixer Using Symmetric MOS Varactors
| Autor: | Qian Zhong, K. O. Kenneth, Wooyeol Choi |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Materials science
business.industry Heterojunction bipolar transistor 020208 electrical & electronic engineering Harmonic mixer 02 engineering and technology Noise figure Amplitude modulation CMOS 0202 electrical engineering electronic engineering information engineering Optoelectronics Radio frequency Electrical and Electronic Engineering business Compatible sideband transmission Varicap |
| Zdroj: | IEEE Journal of Solid-State Circuits. 56:355-366 |
| ISSN: | 1558-173X 0018-9200 |
| Popis: | A 560-GHz radio frequency (RF) front-end employing an accumulation mode MOS symmetric varactor (SVAR) subharmonic mixer achieves a minimum single sideband (SSB) noise figure (NF) of 35 dB in the fourth-order subharmonic mixing (SHM) mode which is 5 dB lower than that of SiGe HBT mixers. The front-end fabricated in 65-nm CMOS also achieves 45-dB SSB NF for sixth-order SHM at RF=810 GHz and 60-dB SSB NF for tenth-order SHM at RF=1.2 THz. Use of SVARs in a mixer is the first and the 1.2-THz RF is the highest for mixers in silicon technologies. The measurement results are explained using the parametric amplification theory. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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