Double spin-torque magnetic tunnel junction devices for last-level cache applications

Autor:	G. Hu, C. Safranski, J. Z. Sun, P. Hashemi, S. L. Brown, J. Bruley, L. Buzi, C. P. D'Emic, E. Galligan, M. G. Gottwald, O. Gunawan, J. Lee, S. Karimeddiny, P. L. Trouilloud, D. C. Worledge
Rok vydání:	2022
Zdroj:	2022 International Electron Devices Meeting (IEDM).
DOI:	10.1109/iedm45625.2022.10019402
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e6436168d7a3f387d76e47182722b1aa https://doi.org/10.1109/iedm45625.2022.10019402 Zobrazit plný text záznamu