Reaction of iron and silicon during ion implantation
| Autor: | G. Crecelius, K. Radermacher, Ch. Dieker |
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| Rok vydání: | 1993 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 73:4848-4851 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.353800 |
| Popis: | Using energy‐loss spectroscopy, energy dispersive x‐ray analysis, electron diffraction, and He+‐ion channeling the reaction of Fe during implantation into Si(111) has been investigated at various target temperatures and implantation doses. In samples implanted at 275 °C with 2.8×1017 Fe+ cm−2 a continuous α‐FeSi2 layer accompanied by α‐phase precipitates is formed. At 450 °C Fe agglomerates mostly in α‐phase precipitates with only a few being β‐FeSi2. At 350 °C 1×1017 Fe+ cm−2 produce precipitates electronically close to FeSi2 but crystallographically poorly defined. At 4×1017 Fe+ cm−2 a β‐FeSi2 layer is formed at the surface and a 20‐nm‐thick α‐FeSi2 one followed by α‐FeSi2 precipitates deeper in the volume. Channeling reveals a minimum yield decreasing with dose indicating improved α‐phase crystal quality. A sharp increase at 3.3×1017 cm−2 indicates an α–β phase transition. FeSi has not been detected. Precipitates of well defined silicide phases are formed already during implantation. Dose and temperatu... |
| Databáze: | OpenAIRE |
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