Modifications of Porous Low-k by Plasma Treatments and Wet Cleans

Autor:	Sally-Ann Henry, P. Mertens, Quoc Toan Le, Harald Kraus, Michael Dalmer, Guy Vereecke, Els Kesters, Ivan Berry, Frederic Kovacs, Leo Archer, Kaidong Xu, Qingyuan Han, Ernst Gaulhofer, Marcel Lux, Shijian Luo
Rok vydání:	2007
Předmět:	chemistry.chemical_classification Materials science Plasma etching Resist Chemical engineering chemistry Dielectric Plasma Polymer Porosity
Zdroj:	ECS Transactions. 11:409-416
ISSN:	1938-6737 1938-5862
Popis:	With the implementation of Cu and low-k dielectrics in back-end-of-line (BEOL), issues arise in every process step that must be addressed. One of the challenges is the susceptibility of low-k materials to attack during residue removal (polymer) after low-k etch and resist strip. This work focuses on the influence of the plasma etch and ash processes on compatibility of porous low-k dielectrics with a selection of wet chemistries that are used for BEOL polymer removal. The low-k material investigated was porous nanoclustered silica. For blanket films, it is shown that the chemical and structural changes to ultra low-k(ULK) by the plasma treatments are the main contributors to the plasma damage. Two wet chemistries including dHF are found to be compatible with most plasma treatments used in this study. It is also demonstrated that chemistry selection for wet cleaning is linked with the plasma treatments used for etch and ash.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e6326ddac32e42023bde5cc66be92124 https://doi.org/10.1149/1.2779405 Zobrazit plný text záznamu