Topological surface states above the Fermi level in Hf2Te2P
| Autor: | Peter Klavins, M. Walker, Aaron Bostwick, Inna Vishik, E. H. da Silva Neto, E. Rotenberg, Valentin Taufour, M. K. Miller, Chris Jozwiak, P. Carlson, T. J. Boyle, Antonio Rossi, Jingtai Zhao |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Physics
Photoemission spectroscopy Scanning tunneling spectroscopy Doping Fermi level 02 engineering and technology 021001 nanoscience & nanotechnology Topology 01 natural sciences symbols.namesake Atomic orbital Topological insulator 0103 physical sciences symbols 010306 general physics 0210 nano-technology Electronic band structure Surface states |
| Zdroj: | Physical Review B. 100 |
| ISSN: | 2469-9969 2469-9950 |
| DOI: | 10.1103/physrevb.100.081105 |
| Popis: | Author(s): Boyle, TJ; Rossi, A; Walker, M; Carlson, P; Miller, MK; Zhao, J; Klavins, P; Jozwiak, C; Bostwick, A; Rotenberg, E; Taufour, V; Vishik, IM; Da Silva Neto, EH | Abstract: We report a detailed experimental study of the band structure of the recently discovered topological material Hf2Te2P. Using the combination of scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy with surface K doping, we probe the band structure of Hf2Te2P with energy and momentum resolution above the Fermi level. Our experiments show the presence of multiple surface states with a linear Dirac-like dispersion, consistent with the predictions from previously reported band-structure calculations. In particular, scanning tunneling spectroscopy measurements provide experimental evidence for the strong topological surface state predicted at 460meV, which stems from the band inversion between Hf-d and Te-p orbitals. This band inversion comprised of more localized d states could result in a better surface-to-bulk conductance ratio relative to more traditional topological insulators. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|