Electrochemical profiling of heterostructures with multiple quantum wells InGaN/GaN

Autor:	Anna Zubkova, Olga Kucherova, V. I. Zubkov, Dmitry Frolov
Rok vydání:	2013
Předmět:	Materials science business.industry Atomic force microscopy Multiple quantum High density Heterojunction Condensed Matter Physics Electrochemistry Planarity testing law.invention law Optoelectronics business Quantum well Light-emitting diode
Zdroj:	physica status solidi c. 10:342-345
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.201200661
Popis:	A method of electrochemical capacitance-voltage profiling is used to characterize InGaN/GaN heterostructures with multiple quantum wells. Implementation of pulsed electrochemical etching allowed getting good planarity of etched surface despite of the high density of dislocations in GaN. The quality of etching, optimization of its parameters and independent check of etched depth were controlled by AFM measurements. Concentration profiles of InGaN/GaN QWs structures were evaluated then from capacitance-voltage measurements revealing several quantum wells with a period of 17 nm. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e62a44b88aef1c94cbd72ef7abbb162d https://doi.org/10.1002/pssc.201200661 Zobrazit plný text záznamu Plný text