Growth of nonpolar m-plane GaN (10−10) single crystal on (100) LiAlO2 substrate by a newly designed hydride vapor phase epitaxy

Autor:	Mitch M.C. Chou, Chuck W.C. Hsu, Chenlong Chen, Calvin Liu, Chu-An Li, Jin-Wei Lu
Rok vydání:	2011
Předmět:	Inorganic Chemistry Materials science Photoluminescence Hydride Scanning electron microscope Materials Chemistry Analytical chemistry Substrate (electronics) Chemical vapor deposition Condensed Matter Physics Epitaxy Spectroscopy Single crystal
Zdroj:	Journal of Crystal Growth. 316:6-9
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2010.11.160
Popis:	A newly designed two-step reactor which places both chemical vapor deposition (CVD) and hydride vapor phase epitaxy (HVPE) in series is proposed to grow nonpolar m -plane GaN (1 0 −1 0) material on a closely lattice-matched (1 0 0) LiAlO 2 single crystal substrate. The surface morphologies are characterized by scanning electron microscopy. Structural properties of the GaN epilayers are investigated by X-ray diffraction, and the FWHM of GaN (1 0 −1 0) rocking curve is around 0.13°. Optical and electrical properties are evaluated by photoluminescence spectroscopy, optical transmission spectra and Hall measurement. Photoluminescence spectroscopy exhibited a near band edge emission peak at 3.410 eV. The carrier concentration is (3.9±0.01)×10 18 cm −3 .
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e60cc3814d3640a3dc8a0d1d51f648c9 https://doi.org/10.1016/j.jcrysgro.2010.11.160 Zobrazit plný text záznamu Full Text from ScienceDirect