A study of point defect detectors created by Si and Ge implantation

Autor:	Kevin S. Jones, S. Prussin, M. E. Law, H. L. Meng
Rok vydání:	1993
Předmět:	Thermal oxidation Materials science Silicon General Physics and Astronomy chemistry.chemical_element Mineralogy Germanium Crystallographic defect Molecular physics Ion Ion implantation chemistry Vacancy defect Dislocation
Zdroj:	Journal of Applied Physics. 73:955-960
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.353309
Popis:	Short‐time/low‐temperature thermal oxidation is known to lead to point defect perturbations in silicon. This study investigates the interaction between oxidation‐induced point defects and type II dislocation loops intentionally introduced in silicon via ion implantation. The type II (end‐of‐range) dislocation loops were introduced via implantation of either Si+ ions at 50 keV or Ge+ ions at 100 keV into
Databáze:	OpenAIRE
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