Growth of ultra thin PbS films by SILAR technique
| Autor: | Valentinas Snitka, Markku Leskelä, Seppo Lindroos, Judita Puišo, Sigitas Tamulevičius |
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| Rok vydání: | 2003 |
| Předmět: |
010302 applied physics
Silicon Scanning electron microscope Metals and Alloys chemistry.chemical_element Ionic bonding 02 engineering and technology Surfaces and Interfaces 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Crystallography chemistry Chemical engineering X-ray photoelectron spectroscopy 0103 physical sciences Microscopy Materials Chemistry Crystallite Thin film 0210 nano-technology Layer (electronics) |
| Zdroj: | Thin Solid Films. 428:223-226 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(02)01268-3 |
| Popis: | The successive ionic layer adsorption and reaction (SILAR) technique involves growth of thin films from solution, ionic layer by ionic layer at room temperature and normal pressure. The aim of this work is to characterize SILAR grown PbS thin films (15–100 nm) on silicon substrates using different lead-precursor solutions. The X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy investigations have been performed to compare the properties of the films grown with different lead precursor solutions. The PbS ultra thin films were polycrystalline and cubic. The films were stoichiometric and contained some oxygen. The film roughness and crystallite size could be controlled by choosing the lead precursors. |
| Databáze: | OpenAIRE |
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