Heavy ion SEE test of 2 Gbit DDR3 SDRAM
| Autor: | Heikki Kettunen, Fritz Gliem, Veronique Ferlet-Cavrois, Martin Herrmann, Kai Grurmann |
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| Rok vydání: | 2011 |
| Předmět: | |
| Zdroj: | 2011 12th European Conference on Radiation and Its Effects on Components and Systems. |
| DOI: | 10.1109/radecs.2011.6131333 |
| Popis: | New generation 2 Gbit DDR3 SDRAMs from Micron, Samsung and Nanya have been tested under heavy ions. SEFIs significantly outweigh random SEU errors even at low LET; however, SEFIs can be mitigated by frequent re-initialization. |
| Databáze: | OpenAIRE |
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