A Self-Powered Photovoltaic Photodetector Based on a Lateral WSe2-WSe2 Homojunction
| Autor: | Chaoyang Tan, Lijie Chen, Liang Li, Huanhuan Wang, Junmin Xu, Xiangde Zhu, Wenshuai Gao, Gang Li, Hui Li, Xiaozong Hu, Tianyou Zhai, Jiawang Chen |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry Photodetector 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Photodiode law.invention Rectification Depletion region Modulation law Optoelectronics General Materials Science Homojunction 0210 nano-technology business Voltage Diode |
| Zdroj: | ACS Applied Materials & Interfaces. 12:44934-44942 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.0c11456 |
| Popis: | Lateral homojunctions made of two-dimensional (2D) layered materials are promising for optoelectronic and electronic applications. Here, we report the lateral WSe2-WSe2 homojunction photodiodes formed spontaneously by thickness modulation in which there are unique band structures of a unilateral depletion region. The electrically tunable junctions can be switched from n-n to p-p diodes, and the corresponding rectification ratio increases from about 1 to 1.2 × 104. In addition, an obvious photovoltaic behavior is observed at zero gate voltage, which exhibits a large open voltage of 0.49 V and a short-circuit current of 0.125 nA under visible light irradiation. In addition, due to the unilateral depletion region, the diode can achieve a high detectivity of 4.4 × 1010 Jones and a fast photoresponse speed of 0.18 ms at Vg = 0 and Vds = 0. The studies not only demonstrated the great potential of the lateral homojunction photodiodes for a self-power photodetector but also allowed for the development of other functional devices, such as a nonvolatile programmable diode for logic rectifiers. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|