Record ION/IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability

Autor:	Koen Martens, Roger Loo, Jing-Cheng Lin, Gillis Winderickx, M.M. Heyns, E. Vrancken, B. De Jaeger, Frederik Leys, Geert Eneman, K. De Meyer, Denis Shamiryan, T. Vandeweyer, C.H. Yu, Jerome Mitard, Matty Caymax, Marc Meuris, Luigi Pantisano, David P. Brunco, Geert Hellings
Rok vydání:	2008
Předmět:	Ion implantation Materials science Equivalent series resistance Stack (abstract data type) Passivation business.industry Logic gate MOSFET Electronic engineering Optoelectronics Equivalent oxide thickness business AND gate
Zdroj:	2008 IEEE International Electron Devices Meeting.
DOI:	10.1109/iedm.2008.4796837
Popis:	We report on a 65 nm Ge pFET with a record performance of Ion = 478muA/mum and Ioff,s= 37nA/mum @Vdd= -1V. These improvements are quantified and understood with respect to halo/extension implants, minimizing series resistance and gate stack engineering. A better control of Ge in-diffusion using a low-temperature epi-silicon passivation process allows achieving 1nm EOT Ge-pFET with increased performance.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e5f6a1aad5d0e92c9d3d083ce8e6c9ca https://doi.org/10.1109/iedm.2008.4796837 Zobrazit plný text záznamu