Ion reaction tunable ON/OFF ratio of vertically oriented Zn-Al layered-double-hydroxide nanosheets based memristor
| Autor: | Hosameldeen Elshekh, Mashair Babiker, Feng Yang, Bai Sun, Guoqiang Huang, Wentao Hou, Yong Zhao, Yong Zhang, Mayameen S. Kadhim |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
02 engineering and technology Substrate (electronics) 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Resistive random-access memory chemistry.chemical_compound Chemical engineering chemistry Mechanics of Materials Electrode Materials Chemistry Hydroxide General Materials Science 0210 nano-technology Layer (electronics) Nanoscopic scale Deposition (law) FOIL method |
| Zdroj: | Materials Today Communications. 20:100573 |
| ISSN: | 2352-4928 |
| DOI: | 10.1016/j.mtcomm.2019.100573 |
| Popis: | Resistance random access memory (RRAM) has attracted considerable scientific and industrial attention as a next-generation data memory system. In this work, zinc–aluminium layered double hydroxide Zn-Al (LDH) films were sequentially prepared by direct deposition on alumina (Al) foil substrate. Further, a sandwich Ag/Zn-Al (LDH)/Al structure was prepared by printing Ag as a top electrode. The device displays a variable OFF/ON resistance ratio (from 104 to 102) due to the stacked, layered structure and interaction of Ag ion and anion inside Zn-Al (LDH) layer. To explain the conductive mechanism, the formation and rupture of nanoscale Ag filament inside the Zn-Al (LDH) vertical nanosheets are recommended to describe the memory performance. This work indicates that Zn-Al (LDH) vertical nanosheets have great potential to be used in flexible memory devices in the near future. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect