GaAs buried heterostructure vertical cavity top-surface emitting lasers
| Autor: | K. Yodoshi, T. Ishikawa, Takao Yamaguchi, Tatsuhiko Niina, Koutarou Furusawa, Akira Ibaraki |
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| Rok vydání: | 1991 |
| Předmět: |
Materials science
business.industry Physics::Optics Heterojunction Condensed Matter Physics Laser Atomic and Molecular Physics and Optics Semiconductor laser theory law.invention Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound Optics Distributed Bragg reflector laser chemistry law Continuous wave Optoelectronics Electrical and Electronic Engineering business Lasing threshold Diode |
| Zdroj: | IEEE Journal of Quantum Electronics. 27:1386-1390 |
| ISSN: | 0018-9197 |
| DOI: | 10.1109/3.89955 |
| Popis: | Room-temperature continuous wave (CW) operation was achieved using GaAs buried heterostructure vertical cavity top-surface emitting lasers with both GaAlAs/AlAs and SiO/sub 2//TiO/sub 2/ distributed Bragg reflectors (DBRs). One-step organometallic vapor phase epitaxy (OMVPE) and two-step liquid phase epitaxy (LPE) growth techniques has been developed. In order to improve the reflectivity of both DBRs, the Bragg wavelength was designed to correspond with a longer mode than the lasing mode under pulsed conditions, and a sufficiently flat planar surface was formed by LPE growth. The threshold current was 17.4 mA, and an output power of up to 0.84 mW was obtained. The lasing wavelength was about 911 nm. A 5*6 common voltage array was used as a trial structure for a two-dimensional array consisting of the buried heterostructure top-surface emitting laser diodes. > |
| Databáze: | OpenAIRE |
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