High current bulk GaN Schottky rectifiers
| Autor: | B. Luo, Yong Jo Park, Fan Ren, Sang-Yong Park, K. Ip, A.P. Zhang, K.H. Baik, Stephen J. Pearton |
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| Rok vydání: | 2002 |
| Předmět: |
Materials science
business.industry Schottky diode Condensed Matter Physics Thermionic field emission Electronic Optical and Magnetic Materials Field electron emission Duty cycle Materials Chemistry Optoelectronics Breakdown voltage High current Electrical and Electronic Engineering business Forward current Leakage (electronics) |
| Zdroj: | Solid-State Electronics. 46:2169-2172 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/s0038-1101(02)00187-9 |
| Popis: | GaN Schottky rectifiers employing guard-ring and SiO2 edge termination show almost ideal forward current characteristics, with ideality factor 1.08 and specific on-state resistance as low as 2.6×10−3 Ω cm2. A maximum forward current of 1.72 A at 6.28 V was achieved under pulsed (10% duty cycle) conditions. The reverse breakdown voltage was inversely dependent on rectifier area. The presence of defects in the GaN still dominates the reverse leakage, with both field emission and thermionic field emission contributions present. The parallel-plane breakdown voltage is never reached, even with the use of multiple edge termination methods, but the results show the promise of GaN rectifiers for power conditioning and electric utility applications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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